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2N6284G
2N6284G
Darlington BJT 2N6284G
onsemi
2N6284G
--
Diodes, Transistors and Thyristors
Darlington BJT
2N6284G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Maximum DC Current Gain18000@10A@3V
Minimum DC Current Gain100@20A@3V|750@10A@3V
Maximum Base Current (A)0.5
Number of Elements per Chip1
Minimum DC Current Gain Range500 to 3600|<500
Maximum Power Dissipation (mW)160000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Typical Transition Frequency (MHz)4(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Typical Current Gain Bandwidth (MHz)4(Min)
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)4@200mA@20A
Maximum Continuous DC Collector Current (A)20
Maximum Collector-Emitter Saturation Voltage (V)2@40mA@10A|3@200mA@20A
Description
Trans Darlington NPN 100V 20A 160000mW 3-Pin(2+Tab) TO-3 Tray
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