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BD645-S
BD645-S
Darlington BJT BD645-S
Bourns
BD645-S
--
Diodes, Transistors and Thyristors
Darlington BJT
BD645-S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.7(Max)
Package Height8.72(Max)
Package Length10.4(Max)
Supplier PackageTO-220
Standard Package NameTO-220
Minimum DC Current Gain750@3A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)62500
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (uA)200
Maximum Base Emitter Saturation Voltage (V)3@50mA@5A
Maximum Continuous DC Collector Current (A)8
Maximum Collector-Emitter Saturation Voltage (V)2.5@50mA@5A|2@12mA@3A
Description
Trans Darlington NPN 60V 8A 62500mW 3-Pin(3+Tab) TO-220
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