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BD681S
BD681S
Darlington BJT BD681S
onsemi
BD681S
--
Diodes, Transistors and Thyristors
Darlington BJT
BD681S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain750@1.5A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (uA)200
Maximum Continuous DC Collector Current (A)4
Maximum Collector-Emitter Saturation Voltage (V)2.5@30mA@1.5A
Description
Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-126 Bag
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