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Darlington BJT ESM2012DV
STMicroelectronics
ESM2012DV
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant with Exemption |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Obsolete |
| Configuration | Single Dual Emitter |
| Package Width | 25.5(Max) |
| Package Height | 9.1(Max) |
| Package Length | 38.2(Max) |
| Supplier Package | ISOTOP |
| Standard Package Name | ISOTOP |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 1200(Typ)@100A@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 175000 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 120 |
| Maximum Base Emitter Saturation Voltage (V) | 3@1A@100A |
| Maximum Continuous DC Collector Current (A) | 120 |
| Maximum Collector-Emitter Saturation Voltage (V) | 2@1A@100A|1.5@0.25A@70A |
| Description |
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