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KSE800S
KSE800S
Darlington BJT KSE800S
onsemi
KSE800S
--
Diodes, Transistors and Thyristors
Darlington BJT
KSE800S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Supplier PackageTO-126
Minimum DC Current Gain100@4A@3V|750@1.5A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (uA)100
Maximum Continuous DC Collector Current (A)4
Maximum Collector-Emitter Saturation Voltage (V)3@40mA@4A|2.5@30mA@1.5A
Description
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-126 Bulk
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