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MJB5742T4G
MJB5742T4G
Darlington BJT MJB5742T4G
onsemi
MJB5742T4G
--
Diodes, Transistors and Thyristors
Darlington BJT
MJB5742T4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@4A@5V|50@0.5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum Emitter Base Voltage (V)8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)3.5@0.4A@8A|2.5@0.2A@4A
Maximum Continuous DC Collector Current (A)8
Maximum Collector-Emitter Saturation Voltage (V)3@0.4A@8A|2@0.2A@4A
Description
Trans Darlington NPN 400V 8A 2000mW 3-Pin(2+Tab) D2PAK T/R
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