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Darlington BJT MJD112-1G
onsemi
MJD112-1G
--
Diodes, Transistors and Thyristors
Darlington BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2.38(Max) |
| Package Height | 6.35(Max) |
| Package Length | 6.73(Max) |
| Supplier Package | IPAK |
| Standard Package Name | TO-251 |
| SVHC Exceeds Threshold | Yes |
| Maximum DC Current Gain | 12000@2A@3V |
| Minimum DC Current Gain | 500@0.5A@3V|200@4A@3V|1000@2A@3V |
| Maximum Base Current (A) | 0.05 |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | <500|500 to 3600 |
| Maximum Power Dissipation (mW) | 1750 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 100 |
| Typical Transition Frequency (MHz) | 25(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 150 |
| Typical Current Gain Bandwidth (MHz) | 25(Min) |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (uA) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 4@40mA@4A |
| Maximum Continuous DC Collector Current (A) | 2 |
| Maximum Collector-Emitter Saturation Voltage (V) | 2@8mA@2A|3@40mA@4A |
| Description |
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