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MJD112TF
MJD112TF
Darlington BJT MJD112TF
onsemi
MJD112TF
--
Diodes, Transistors and Thyristors
Darlington BJT
MJD112TF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain1000@2A@3V|200@4A@3V|500@500mA@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Current Gain Bandwidth (MHz)25(Min)
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (uA)20
Maximum Base Emitter Saturation Voltage (V)4@40mA@4A
Maximum Continuous DC Collector Current (A)2
Maximum Collector-Emitter Saturation Voltage (V)2@8mA@2A|3@40mA@4A
Description
Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R
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