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MJE702G
MJE702G
Darlington BJT MJE702G
onsemi
MJE702G
--
Diodes, Transistors and Thyristors
Darlington BJT
MJE702G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Supplier PackageTO-225
Minimum DC Current Gain100@4A@3V|750@1.5A@3V
Maximum Base Current (A)0.1
Number of Elements per Chip1
Minimum DC Current Gain Range<500|500 to 3600
Maximum Power Dissipation (mW)40000
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (uA)100
Maximum Continuous DC Collector Current (A)4
Maximum Collector-Emitter Saturation Voltage (V)2.5@30mA@1.5A|3@40mA@4A
Description
Trans Darlington PNP 80V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
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