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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NJVMJD112G
NJVMJD112G
Darlington BJT NJVMJD112G
onsemi
NJVMJD112G
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Diodes, Transistors and Thyristors
Darlington BJT
NJVMJD112G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain500@0.5A@3V|1000@2A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Current Gain Bandwidth (MHz)25(Min)
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (uA)20
Maximum Base Emitter Saturation Voltage (V)4@40mA@4A
Maximum Continuous DC Collector Current (A)2
Maximum Collector-Emitter Saturation Voltage (V)3@40mA@4A|2@8mA@2A
Description
Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube
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