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Discrete Semiconductor Products NP82N04NUG-S18-AY
Renesas Electronics
NP82N04NUG-S18-AY
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other
Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 41A, 10V |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Supplier Device Package | TO-262 |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9750 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Description |
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