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Discrete Semiconductor Products RJS6004TDPN-EJ#YJ1
Renesas Electronics
RJS6004TDPN-EJ#YJ1
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
Mounting TypeThrough Hole
Package / CaseTO-220-2
Product StatusObsolete
Supplier Device PackageTO-220AB-2L
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)10A
Operating Temperature - Junction150°C (Max)
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Description
DIODE SIC 600V 10A TO220AB-2L
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