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Flash AM29DL163DB-90EF(SPANSION)
Cypress
AM29DL163DB-90EF(SPANSION)
--
Memory
Flash
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| Bank Size | 4/12Mb |
| Cell Type | NOR |
| ECCN (US) | EAR99 |
| Boot Block | Yes |
| ECC Support | No |
| Part Status | Obsolete |
| Sector Size | 8Kbyte x 8|64Kbyte x 31 |
| Timing Type | Asynchronous |
| Architecture | Sectored |
| Interface Type | Parallel |
| Number of Banks | 2 |
| Number of Words | 2M/1M |
| Programmability | Yes |
| Block Organization | Asymmetrical |
| Chip Density (bit) | 16M |
| Command Compatible | Yes |
| Process Technology | CMOS |
| OE Access Time (ns) | 40 |
| Program Current (mA) | 30 |
| Support of Page Mode | No |
| Max. Access Time (ns) | 90 |
| Location of Boot Block | Bottom |
| Maximum Erase Time (S) | 15/Sector |
| Operating Current (mA) | 16 |
| Address Bus Width (bit) | 21/20 |
| Programming Voltage (V) | 2.7 to 3.6|8.5 to 9.5 |
| Number of Bits/Word (bit) | 8/16 |
| Supplier Temperature Grade | Industrial |
| Maximum Programming Time (ms) | 27000/Chip |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3|3.3 |
| Description |
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