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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Flash MT29F2G08ABAEAH4-IT:E TR
Micron Technology
MT29F2G08ABAEAH4-IT:E TR
--
Memory
Flash
Specification
Product AttributeAttribute Value
EU RoHSCompliant
Cell TypeSLC NAND
PackagingTray
Page Size2Kbyte
Boot BlockYes
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words256M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.003/Block
Operating Current (mA)35
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Memory
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