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Flash AM29LV320DB-90EC/T
Cypress
AM29LV320DB-90EC/T
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
AutomotiveNo
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size64Kbyte x 63|8Kbyte x 8
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words4M/2M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)32M
Command CompatibleYes
Process TechnologyCMOS
OE Access Time (ns)40
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)90
Location of Boot BlockBottom
Maximum Erase Time (S)15/Sector
Operating Current (mA)16
Address Bus Width (bit)22/21
Programming Voltage (V)11.5 to 12.5|2.7 to 3.6
Number of Bits/Word (bit)8/16
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)108000/Chip
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 90ns T/R
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