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Flash K9F1216U0A-DCB000
Samsung Electronics
K9F1216U0A-DCB000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size512byte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size16Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width8.5
Interface TypeParallel
Package Height0.58
Package Length15
Number of Words32M
ProgrammabilityYes
Supplier PackageTBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)12000
Standard Package NameBGA
Maximum Erase Time (S)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)25
Number of Bits/Word (bit)16
Supplier Temperature GradeCommercial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 512M-bit 32M x 16 12us 63-Pin TBGA Tray
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