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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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K9F1G08U0C-PCB0000
K9F1G08U0C-PCB0000
Flash K9F1G08U0C-PCB0000
Samsung Electronics
K9F1G08U0C-PCB0000
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.01/Block
Operating Current (mA)30
Page Read Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-10
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Parallel 3.3V 1G-bit 128M x 8 48-Pin TSOP-I Tray
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