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Flash KFG1216Q2B-DEB8000
Samsung Electronics
KFG1216Q2B-DEB8000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Part StatusObsolete
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Interface TypeParallel|Serial
Number of Words32M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleNo
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)8
Operating Current (mA)40
Address Bus Width (bit)16
Number of Bits/Word (bit)16
Supplier Temperature GradeExtended
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-30
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NAND Flash Parallel/Serial 1.8V 512M-bit 32M x 16 8ns 63-Pin FBGA Tray
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