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KLMCG8GEND-B031
KLMCG8GEND-B031
Flash KLMCG8GEND-B031
Samsung Electronics
KLMCG8GEND-B031
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
Cell TypeMLC NAND
AutomotiveNo
Boot BlockYes
ECC SupportYes
Part StatusObsolete
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial e-MMC
Number of Words512G/128G/64G
ProgrammabilityYes
Chip Density (bit)512G
Command CompatibleYes
Support of Page ModeNo
Maximum Erase Time (S)0.02
Number of Bits/Word (bit)1/4/8
Maximum Operating Frequency (MHz)200
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-25
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
MLC NAND Flash Serial e-MMC 3V/3.3V 512G-bit 512G/128G/64G x 1/4-bit/8-bit 153-Pin FBGA
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