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S29GL032M11FFIR40
S29GL032M11FFIR40
Flash S29GL032M11FFIR40
Cypress
S29GL032M11FFIR40
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Words/8byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusObsolete
Sector Size64Kbyte x 63|8Kbyte x 8
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height0.6(Min)
Package Length13
Number of Words4M/2M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationAsymmetrical
Chip Density (bit)32M
Command CompatibleYes
OE Access Time (ns)30
Program Current (mA)60
Support of Page ModeYes
Max. Access Time (ns)110
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (S)64/Chip
Operating Current (mA)60
Page Read Current (mA)20@10MHz
Address Bus Width (bit)22/21
Programming Voltage (V)11.5 to 12.5|2.7 to 3.6
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)30
Maximum Programming Time (ms)31500(Typ)/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8/2M x 16 110ns 64-Pin Fortified BGA Tray
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