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M28W160ECB70ZB6
M28W160ECB70ZB6
Flash M28W160ECB70ZB6
Micron Technology
M28W160ECB70ZB6
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Pin Count46
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed46
Part StatusObsolete
Sector Size64Kbyte x 31|8Kbyte x 8
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.37
Interface TypeParallel
Package Height1(Max)
Package Length6.39
Number of Words1M
ProgrammabilityYes
Supplier PackageTFBGA
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleYes
OE Access Time (ns)20
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockBottom
Maximum Erase Time (s)5/Main Block
Operating Current (mA)18
Address Bus Width (bit)20
Programming Voltage (V)2.7 to 3.6|11.4 to 12.6
Number of Bits/Word (bit)16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 16M-bit 1M x 16 70ns 46-Pin TFBGA Tray
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