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M29F016B90N6
M29F016B90N6
Flash M29F016B90N6
Micron Technology
M29F016B90N6
--
Memory
Flash
M29F016B90N6.pdf
Specification
Product AttributeAttribute Value
EU RoHSSupplier Unconfirmed
Cell TypeNOR
ECCN (US)EAR99
PackagingTape and Reel
Boot BlockNo
ECC SupportNo
Part StatusObsolete
Sector Size64Kbyte x 32
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words2M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)16M
Command CompatibleYes
OE Access Time (ns)35
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)90
Maximum Erase Time (s)70/Chip
Operating Current (mA)20
Address Bus Width (bit)21
Programming Voltage (V)4.5 to 5.5
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)70000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)5.5
Minimum Operating Supply Voltage (V)4.5
Typical Operating Supply Voltage (V)5
Description
NOR Flash Parallel 5V 16M-bit 2M x 8 90ns 40-Pin TSOP T/R
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