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M29W640GB90N6E
M29W640GB90N6E
Flash M29W640GB90N6E
Micron Technology
M29W640GB90N6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTray
Page Size4Words
AutomotiveNo
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size8Kbyte x 8|64Kbyte x 127
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words8M/4M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)64M
Command CompatibleNo
OE Access Time (ns)30
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)90
Location of Boot BlockBottom
Maximum Erase Time (S)400/Chip
Operating Current (mA)10
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6|11.5 to 12.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)30
Maximum Programming Time (ms)400000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 90ns Tray
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