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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT25QL01GBBB8ESFE01-2SIT TR
MT25QL01GBBB8ESFE01-2SIT TR
Flash MT25QL01GBBB8ESFE01-2SIT TR
Micron Technology
MT25QL01GBBB8ESFE01-2SIT TR
--
Memory
Flash
MT25QL01GBBB8ESFE01-2SIT TR.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size256byte
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size64Kbyte x 2048
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial-SPI
Number of Words1G/512M/256M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeNo
Max. Access Time (ns)6
Location of Boot BlockBottom|Top
Maximum Erase Time (s)1/Sector
Operating Current (mA)35
Address Bus Width (bit)1
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)1.8/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial-SPI 3V/3.3V 1G-bit 1G/512M/256M x 1/2-bit/4-bit 6ns 16-Pin SOP-II
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