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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT25QU512ABB8E12-0AUT TR
MT25QU512ABB8E12-0AUT TR
Flash MT25QU512ABB8E12-0AUT TR
Micron Technology
MT25QU512ABB8E12-0AUT TR
--
Memory
Flash
MT25QU512ABB8E12-0AUT TR.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size256byte
Boot BlockYes
ECC SupportNo
Part StatusActive
Sector Size64Kbyte x 1024
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words512M/256M/128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Program Current (mA)35
Support of Page ModeNo
Max. Access Time (ns)6
Location of Boot BlockBottom|Top
Maximum Erase Time (s)1/Sector
Operating Current (mA)35
Address Bus Width (bit)32
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)1.8/Page
Maximum Operating Frequency (MHz)166
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 6ns Automotive 24-Pin TBGA
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