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MT28EW512ABA1HPN-0SIT TR
MT28EW512ABA1HPN-0SIT TR
Flash MT28EW512ABA1HPN-0SIT TR
Micron Technology
MT28EW512ABA1HPN-0SIT TR
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Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel|Tray
Page Size16Words/32byte
Boot BlockNo
ECC SupportNo
Part StatusActive
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words64M/32M
ProgrammabilityYes
Chip Density (bit)512M
Command CompatibleYes
OE Access Time (ns)25
Support of Page ModeYes
Max. Access Time (ns)100
Maximum Erase Time (s)104(Typ)/Chip
Operating Current (mA)31
Page Read Current (mA)16
Address Bus Width (bit)25
Programming Voltage (V)2.7 to 3.6|8.5 to 9.5
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Maximum Page Access Time (ns)20
Maximum Programming Time (ms)0.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 56-Pin VFBGA T/R/Tray
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