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MT29F2G08ABAEAWP-AATX:E TR
MT29F2G08ABAEAWP-AATX:E TR
Flash MT29F2G08ABAEAWP-AATX:E TR
Micron Technology
MT29F2G08ABAEAWP-AATX:E TR
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Memory
Flash
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size2Kbyte
AutomotiveYes
Boot BlockYes
ECC SupportYes
Part StatusNRND
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words256M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (s)0.003/Block
Operating Current (mA)35
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)0.6/Page
Maximum Operating Temperature (°C)115
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 Automotive 48-Pin TSOP
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