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MT29F64G08CBABAWP:B TR
MT29F64G08CBABAWP:B TR
Flash MT29F64G08CBABAWP:B TR
Micron Technology
MT29F64G08CBABAWP:B TR
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSocket
Cell TypeMLC NAND
ECCN (US)3A991.b.1.a
Page Size8Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size2Mbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words8G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)64G
Command CompatibleYes
Program Current (mA)50
Support of Page ModeNo
Maximum Erase Time (S)0.012/Block
Operating Current (mA)50
Address Bus Width (bit)35
Number of Bits/Word (bit)8
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)2.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
MLC NAND Flash Parallel 3.3V 64G-bit 8G x 8 48-Pin
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