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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F8G01ADAFD12-IT:F
MT29F8G01ADAFD12-IT:F
Flash MT29F8G01ADAFD12-IT:F
Micron Technology
MT29F8G01ADAFD12-IT:F
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991b.1.a.
Page Size4Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusLTB
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words8G/4G/2G
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleNo
Program Current (mA)49
Support of Page ModeYes
Max. Access Time (ns)30
Maximum Erase Time (s)0.01/Block
Operating Current (mA)62
Page Read Current (mA)62
Address Bus Width (bit)24
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)115000
Maximum Programming Time (ms)0.6/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 8G-bit 8G/4G/2G x 1/2-bit/4-bit 30ns 24-Pin TBGA T/R/Tray
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