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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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MT29F8G08ABCBBH1-12:B
MT29F8G08ABCBBH1-12:B
Flash MT29F8G08ABCBBH1-12:B
Micron Technology
MT29F8G08ABCBBH1-12:B
--
Memory
Flash
MT29F8G08ABCBBH1-12:B.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
Page Size4Kbyte
Pin Count100
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed100
Part StatusObsolete
Sector Size512Kbyte x 2048
Timing TypeSynchronous|Asynchronous
ArchitectureSectored
Package Width12
Interface TypeParallel|Serial
Package Height0.64
Package Length18
Number of Words1G
ProgrammabilityYes
Supplier PackageVBGA
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleNo
Support of Page ModeYes
Maximum Erase Time (s)0.003/Block
Address Bus Width (bit)30
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel/Serial 3.3V 8G-bit 1G x 8 100-Pin VBGA
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