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N25Q128A13ESE40F
N25Q128A13ESE40F
Flash N25Q128A13ESE40F
Micron Technology
N25Q128A13ESE40F
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size4Kbyte x 4096
Timing TypeSynchronous
ArchitectureSectored
Package Width5.49(Max)
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height1.91(Max)
Package Length5.49(Max)
Number of Words128M/64M/32M
ProgrammabilityYes
Supplier PackageSOIC W
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm
Program Current (mA)20
Support of Page ModeNo
Max. Access Time (ns)7
Standard Package NameSOP
Location of Boot BlockBottom|Top
Maximum Erase Time (S)250/Chip
Operating Current (mA)20
Address Bus Width (bit)24
Programming Voltage (V)2.7 to 3.6|8.5 to 9.5
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)5/Page
Maximum Operating Frequency (MHz)108
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 7ns 8-Pin SOIC W T/R
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