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NAND02GR3B2CZA6E
NAND02GR3B2CZA6E
Flash NAND02GR3B2CZA6E
STMicroelectronics
NAND02GR3B2CZA6E
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
Pin Count63
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportYes
PCB changed63
Part StatusUnconfirmed
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width9.5
Interface TypeParallel
Package Height0.7(Max)
Package Length12
Number of Words256M
ProgrammabilityYes
Supplier PackageVFBGA
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleNo
Program Current (mA)15
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameBGA
Maximum Erase Time (S)0.003/Block
Operating Current (mA)15
Address Bus Width (bit)29
Number of Bits/Word (bit)8
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NAND Flash Parallel 1.8V 2G-bit 256M x 8 25us 63-Pin VFBGA Tray
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