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NAND04GW3B2DN6F
NAND04GW3B2DN6F
Flash NAND04GW3B2DN6F
Micron Technology
NAND04GW3B2DN6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size128Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words512M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)4G
Command CompatibleNo
Program Current (mA)30
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameSOP
Maximum Erase Time (S)0.003/Block
Operating Current (mA)30
Address Bus Width (bit)29
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8 25us 48-Pin TSOP T/R
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