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S34ML16G202BHI003
S34ML16G202BHI003
Flash S34ML16G202BHI003
Cypress
S34ML16G202BHI003
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
Page Size2Kbyte
Pin Count63
AutomotiveUnknown
Boot BlockNo
ECC SupportYes
PCB changed63
Part StatusObsolete
Sector Size128Kbyte x 16384
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1.2(Max) - 0.25(Min)
Package Length11
Number of Words4G
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)16G
Command CompatibleYes
Process Technology32nm
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (S)0.0035(Typ)/Block
Operating Current (mA)30
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.3(Typ)/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 16G-bit 4G x 4-bit 63-Pin BGA T/R
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