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NAND128W3AABN6F
NAND128W3AABN6F
Flash NAND128W3AABN6F
Micron Technology
NAND128W3AABN6F
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256Words/512byte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size16Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words16M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)12000
Standard Package NameSOP
Maximum Erase Time (s)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)24
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 128M-bit 16M x 8 12us 48-Pin TSOP T/R
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