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Flash NAND16GW3B4DN6E
Micron Technology
NAND16GW3B4DN6E
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Memory
Flash
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Cell Type | NAND |
| ECCN (US) | 3A991.b.1.a |
| Page Size | 2Kbyte |
| Automotive | No |
| Boot Block | No |
| ECC Support | Yes |
| Part Status | Unconfirmed |
| Sector Size | 128Kbyte x 16384 |
| Timing Type | Asynchronous |
| Architecture | Sectored |
| Interface Type | Parallel |
| Number of Words | 2G |
| Programmability | Yes |
| Block Organization | Symmetrical |
| Chip Density (bit) | 16G |
| Command Compatible | No |
| Support of Page Mode | Yes |
| Max. Access Time (ns) | 25000 |
| Maximum Erase Time (S) | 0.0015(Typ)/Block |
| Address Bus Width (bit) | 8 |
| Programming Voltage (V) | 2.7 to 3.6 |
| Number of Bits/Word (bit) | 8 |
| Supplier Temperature Grade | Industrial |
| Maximum Page Access Time (ns) | 25(Min) |
| Maximum Programming Time (ms) | 0.2(Typ)/Page |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3 |
| Description |
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