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NAND256W3A0AN6T
NAND256W3A0AN6T
Flash NAND256W3A0AN6T
Micron Technology
NAND256W3A0AN6T
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Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
Cell TypeSLC NAND
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size256Words/512byte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusObsolete
Sector Size16Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words32M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)256M
Command CompatibleNo
Program Current (mA)20
Support of Page ModeYes
Max. Access Time (ns)12000
Maximum Erase Time (s)0.003/Block
Operating Current (mA)20
Address Bus Width (bit)25
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)50(Min)
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
SLC NAND Flash Parallel 3V/3.3V 256M-bit 32M x 8 12us 48-Pin TSOP T/R
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