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NAND32GW3F4AN6E
NAND32GW3F4AN6E
Flash NAND32GW3F4AN6E
Micron Technology
NAND32GW3F4AN6E
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Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991.b.1.a
PackagingTray
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportYes
PCB changed48
Part StatusObsolete
Sector Size256Kbyte x 16384
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words4G
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)32G
Command CompatibleNo
Support of Page ModeYes
Max. Access Time (ns)25000
Standard Package NameSOP
Address Bus Width (bit)1
Number of Bits/Word (bit)8
Maximum Page Access Time (ns)25(Min)
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NAND Flash Parallel 3V/3.3V 32G-bit 4G x 8 25us 48-Pin TSOP Tray
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