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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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Flash S25FL256SAGNFM000
Cypress
S25FL256SAGNFM000
--
Memory
Flash
S25FL256SAGNFM000.pdf
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
Cell TypeNOR
ECCN (US)3A991b.1.a.
Page Size256byte/512byte
Boot BlockYes
ECC SupportYes
Sector Size64Kbyte x 510|4Kbyte x 32
Timing TypeSynchronous
ArchitectureSectored
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Number of Words256M/128M/64M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)256M
Command CompatibleYes
Process Technology65nm, MirrorBit
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)14.5
Location of Boot BlockBottom|Top
Maximum Erase Time (s)330/Bulk
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)1/2/4
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)0.75/Page
Maximum Operating Frequency (MHz)133
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 14.5ns
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