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S29AL016J70BFA010
S29AL016J70BFA010
Flash S29AL016J70BFA010
Infineon
S29AL016J70BFA010
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
EU RoHSCompliant
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Boot BlockYes
ECC SupportNo
Part StatusActive
Sector Size8Kbyte x 2|16Kbyte x 1|32Kbyte x 1|64Kbyte x 31
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words2M/1M
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleYes
Process Technology110nm
OE Access Time (ns)30
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)70
Location of Boot BlockTop
Maximum Erase Time (s)10/Sector
Operating Current (mA)12
Address Bus Width (bit)21/20
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)1000000(Typ)
Supplier Temperature GradeAutomotive
Maximum Programming Time (ms)160000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 70ns Tray
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