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S29GL064S70TFI063
S29GL064S70TFI063
Flash S29GL064S70TFI063
Cypress
S29GL064S70TFI063
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.51
PPAPNo
EU RoHSCompliant
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTape and Reel
Page Size8Words/16byte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusActive
Sector Size64Kbyte x 128
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Words4M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)64M
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)35
Program Current (mA)60
Support of Page ModeYes
Max. Access Time (ns)70
Maximum Erase Time (s)65.4/Chip
Operating Current (mA)50
Page Read Current (mA)20
Address Bus Width (bit)23/22
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)25
Maximum Programming Time (ms)1.2/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 64M-bit 4M x 16 70ns 48-Pin T/R
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