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S29GL512T10TFI030
S29GL512T10TFI030
Flash S29GL512T10TFI030
Cypress
S29GL512T10TFI030
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991b.1.a.
PackagingTray
Page Size32byte
Pin Count56
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportYes
PCB changed56
Part StatusActive
Sector Size128Kbyte x 512
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length14
Number of Words64M/32M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationSymmetrical
Chip Density (bit)512M
Command CompatibleYes
Process Technology45nm, MirrorBit
OE Access Time (ns)35
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)100
Location of Boot BlockTop|Bottom
Maximum Erase Time (S)3.5/Sector
Operating Current (mA)60
Page Read Current (mA)25
Address Bus Width (bit)26/25
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)15
Maximum Programming Time (ms)0.75/Word
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 56-Pin TSOP Tray
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