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Flash S34ML01G200BHI900
Cypress
S34ML01G200BHI900
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
PackagingTray
Page Size2Kbyte
AutomotiveNo
Boot BlockNo
ECC SupportYes
Part StatusUnconfirmed
Timing TypeAsynchronous
Interface TypeParallel
Number of Words128M
ProgrammabilityYes
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Process Technology32nm
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)28
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 Tray
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