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Flash S34ML08G301TFV000
Cypress
S34ML08G301TFV000
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
PackagingTray
Page Size2Kbyte
Pin Count48
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed48
Part StatusAcquired
Sector Size256Kbyte x 4096
Timing TypeAsynchronous
ArchitectureSectored
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words1G
ProgrammabilityYes
Supplier PackageTSOP-I
Block OrganizationSymmetrical
Chip Density (bit)8G
Command CompatibleYes
Program Current (mA)35
Support of Page ModeYes
Maximum Erase Time (S)0.004(Typ)/Block
Operating Current (mA)35
Address Bus Width (bit)32
Number of Bits/Word (bit)8
Supplier Temperature GradeIndustrial Plus
Maximum Programming Time (ms)0.35(Typ)
Maximum Operating Temperature (°C)105
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3|3
Description
SLC NAND Flash Parallel 3V/3.3V 4G-bit 512M x 8
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