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S34MS01G204BHI010
S34MS01G204BHI010
Flash S34MS01G204BHI010
Cypress
S34MS01G204BHI010
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
Cell TypeSLC NAND
ECCN (US)3A991.B.1.A
PackagingTray
Page Size1KWords
Pin Count63
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed63
Sector Size128Kbyte x 1024
Timing TypeAsynchronous
ArchitectureSectored
Package Width9
Interface TypeParallel
Package Height1(Max) - 0.25(Min)
Package Length11
Number of Words64M
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationSymmetrical
Chip Density (bit)1G
Command CompatibleYes
Program Current (mA)30
Support of Page ModeYes
Maximum Erase Time (s)0.01/Block
Operating Current (mA)30
Address Bus Width (bit)27
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)0.7
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
SLC NAND Flash Parallel 1.8V 1G-bit 64M x 16 63-Pin BGA Tray
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