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S70GL02GS12FHIV23
S70GL02GS12FHIV23
Flash S70GL02GS12FHIV23
Infineon
S70GL02GS12FHIV23
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Page Size16Words/32byte
Pin Count64
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed64
Part StatusActive
Sector Size128Kbyte x 2048
Timing TypeAsynchronous
ArchitectureSectored
Package Width11
Interface TypeParallel
Package Height1.4(Max) - 0.4(Min)
Package Length13
Number of Words128M
ProgrammabilityYes
Supplier PackageFortified BGA
Block OrganizationSymmetrical
Chip Density (bit)2G
Command CompatibleYes
Process Technology65nm, MirrorBit
OE Access Time (ns)25
Program Current (mA)100
Support of Page ModeYes
Max. Access Time (ns)120
Standard Package NameBGA
Location of Boot BlockBottom|Top
Operating Current (mA)60
Address Bus Width (bit)27
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)16
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Page Access Time (ns)20
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 2G-bit 128M x 16 120ns 64-Pin Fortified BGA T/R
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