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SST25VF512-20-4C-SAE
SST25VF512-20-4C-SAE
Flash SST25VF512-20-4C-SAE
Microchip Technology
SST25VF512-20-4C-SAE
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNAND
ECCN (US)3A991b.1.a.
PackagingTube
Pin Count8
AutomotiveNo
Boot BlockNo
Lead ShapeGull-wing
ECC SupportNo
PCB changed8
Part StatusActive
Sector Size4Kbyte x 16
Timing TypeSynchronous
ArchitectureSectored
Package Width4(Max)
Interface TypeSerial-SPI
Package Height1.5(Max)
Package Length5(Max)
Number of Words64K
ProgrammabilityYes
Supplier PackageSOIC N
Block OrganizationSymmetrical
Chip Density (bit)512K
Command CompatibleYes
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)20
Standard Package NameSO
Maximum Erase Time (s)0.1/Chip
Operating Current (mA)10
Address Bus Width (bit)1
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)10000
Supplier Temperature GradeCommercial
Maximum Programming Time (ms)0.02/Byte
Maximum Operating Temperature (°C)70
Minimum Operating Temperature (°C)0
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3.3
Description
NAND Flash Serial-SPI 3.3V 512K-bit 64K x 8 20ns 8-Pin SOIC N Tube
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