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TE28F160B3TD70A
TE28F160B3TD70A
Flash TE28F160B3TD70A
Micron Technology
TE28F160B3TD70A
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeGull-wing
ECC SupportNo
PCB changed48
Part StatusObsolete
Timing TypeAsynchronous
Package Width18.4
Interface TypeParallel
Package Height1
Package Length12
Number of Words2M
ProgrammabilityYes
Supplier PackageTSOP
Block OrganizationAsymmetrical
Chip Density (bit)16M
Command CompatibleNo
Program Current (mA)22
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameSOP
Location of Boot BlockTop
Maximum Erase Time (S)5/Block
Operating Current (mA)55
Address Bus Width (bit)20
Programming Voltage (V)11.4 to 12.6|2.7 to 3.6
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Supplier Temperature GradeExtended
Maximum Programming Time (ms)2400/Block
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8 70ns 48-Pin TSOP
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