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2N1132
2N1132
GP BJT 2N1132
Microchip Technology
2N1132
--
Diodes, Transistors and Thyristors
GP BJT
2N1132.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain25@5mA@10V|30@150mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)50
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.5@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)1.3@15mA@150mA
Description
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
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