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2N3019E3
2N3019E3
GP BJT 2N3019E3
Microchip Technology
2N3019E3
--
Diodes, Transistors and Thyristors
GP BJT
2N3019E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5AA
Standard Package NameTO
Minimum DC Current Gain50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)140
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.1@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@15mA@150mA|0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Bag
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